Citation: Tanaka, K.; Nawata, K.; Yamaguchi, M.; Inui, H.; Koiwa, M. (2001). Refinement of crystallographic parameters in refractory metal disilicides. Materials Research Society Symposia Proceedings, 646, pp. N4.3.1-N4.3.5.
Formula: Si2 V
Chemical name: V Si2
List type: noninterleaving
List: 3D
Basis: (1;0;0 0;1;0 0;0;1)
Dimensionality: 3
Formula: Si6 V3 (Si2 V)
Multiplicity: 1
RCSR Symbol: tcc
Coordination sequences: