Citation: Amiraslanov, I.R.; Asadov, F.Yu.; Musaev, A.A.; Guseinov, G.G. (1989). Crystal structure of the new layered semiconductor Ga1.74 In2.92 S7. Soviet Physics, Crystallography (= Kristallografiya), 34, pp. 611-612.
Formula: Ga1.74 In2.92 S7
List type: interleaving
List: 2D
Basis: (1;0;0 0;1;0)
Dimensionality: 2
Formula: Ga2 In3 S4 (Ga2 In3 S4)
Multiplicity: 1
Formula: Ga2 In2 S3 (Ga2 In2 S3)