Citation: Amiraslanov, I.R.; Musaev, A.A.; Asadov, F.Yu.; Maksimov, B.A.; Molchanov, V.N.; Furmanova, N.G. (1990). Synthesis of a new semiconductor Ga0.5 In1.5 S3 with given structure. Soviet Physics, Crystallography (= Kristallografiya), 35, pp. 187-189.
Formula: Ga In3 S6
List type: noninterleaving
List: 3D
Basis: (1;0;0 0;1;0 0;0;1)
Dimensionality: 3
Formula: Ga36 In54 S66 (Ga6 In9 S11)
Multiplicity: 1