Citation: Kaminski, Michal; Podsiadlo, Slawomir; Dominik, Pawel; Wozniak, Krzysztof; Dobrzycki, Lukasz; Jakiela, Rafal; Barcz, Adam; Psoda, Marek; Mizera, Jaroslaw; Bacewicz, Rajmund; Zajac, Marcin; Twardowski, Andrzej (2007). New Chemical Method of Obtaining Thick Ga1-xMnxN Layers: Prospective Spintronic Material. Chemistry of Materials, 19, pp. 3139-.
Formula: Ga0.96 Mn0.04 N
Chemical name: ?
List type: noninterleaving
List: 3D
Basis: (1;0;0 0;1;0 0;0;1)
Dimensionality: 3
Formula: Ga2 Mn2 N2 (Ga Mn N)
Multiplicity: 1