Citation: Nestola, F.; Rotiroti, N.; Bruno, M.; Tribaudino, M.; van Smaalen, S.; Ohashi, H.; Redhammer, G. J. (2007). Low-temperature behavior of NaGaSi2O6 Sample: T = 295 K. American Mineralogist, 92, pp. 560-569.
Formula: Ga Na O6 Si2
List type: noninterleaving
List: 3D
Basis: (1;0;0 0;1;0 0;0;1)
Dimensionality: 3
Formula: Ga4 O24 Si8 (Ga O6 Si2)
Multiplicity: 1
Coordination sequences: