Citation: Sato, A.; Osawa, T.; Ohashi, H. (1995). Low-temperature form of LiGaSi2O6 Sample: T = 273 K Note: anisoU's from ICSD. Acta Crystallographica, Section C, 51, pp. 1959-1960.
Formula: Ga Li O6 Si2
List type: noninterleaving
List: 3D
Basis: (1;0;0 0;1;0 0;0;1)
Dimensionality: 3
Formula: Ga4 O24 Si8 (Ga O6 Si2)
Multiplicity: 1
Coordination sequences: